1) The value of transconductance decreases in simplified low frequency equivalent circuit of n-channel MOSFET due to increase in the value of _______
a. Source resistance
b. Load resistance
c. Both a and b
d. None of the above
2) What is the effect of MOSFET biasing in the saturation region especially while representing the internal resistances and capacitances in n-channel E-MOSFET configuration?
a. Channel gets pinched off at the drain by increasing the value of Cgd
b. Channel gets pinched off at the source by increasing the value of Cgd
c. Channel gets pinched off at the drain by decreasing the value of Cgd upto zero
d. Channel gets pinched off at the source by decreasing the value of Cgd
3) Which among the following are specifically the advantages of bipolar design technology?
A. High input resistance at low frequencies
B. Zero input bias current
C. High voltage gain
D. High value of transconductance
a. A & B
b. A & C
c. B & D
d. C & D
4) Which condition is applicable for a body to be more positive than source in a small signal equivalent circuit of N-type MOSFET inclusive of body effect?
a. Vbs > 0
b. Vbs < 0
c. Vbs = 0
d. None of the above
5) Which among the below mentioned devices acts as a driver in CMOS Inverter Circuit?
a. PMOS
b. NMOS
c. Both a and b
d. None of the above
6) Biasing of D-MOSFET in saturation or non-saturation region while using with depletion load device, specifically depends on ______
a. VDD & Rs
b. VDD & VDS
c. VDD & ID
d. ID & Rs
7) Which resistance plays a significant role in stabilization of Q-point for self-biasing circuit of BJT?
a. Emitter resistance
b. Collector resistance
c. Source resistance
d. Drain resistance
8) What is the significance of adopting an interdigitated structure of power transistors?
a. Prevention of current crowding
b. Maintenance of reasonable current densities
c. Both a and b
d. None of the above
9) Which among the below mentioned reasons is/are responsible for the occurrence of second breakdown phenomenon in power BJT?
a. Large current
b. Distribution of current in a non-uniform manner
c. Excessive power dissipation
d. All of the above
10) Which types of power transistors have the capability to withstand the higher junction temperatures?
a. Silicon power transistors
b. Germanium power transistors
c. Both a and b
d. None of the above
11) Which among the below stated parameters gets affected due to drift region in the power transistor?
a. Breakdown voltage
b. On-state losses
c. Switching time
d. All of the above
12) Which among the following oscillators are specifically preferred at high frequencies?
a. LC oscillators
b. RC oscillator
c. Both a and b
d. None of the above
13) Which among the following measures is/are adopted/used for improving the frequency stability in Colpitt's oscillator?
a. Clapp oscillator
b. Temperature stabilized chamber
c. Voltage regulators
d. All of the above
14) According to the property of tuned circuit used in LC oscillators, the decay rate is proportional to________
a. Shape & size of current pulse
b. Time constant
c. Both a and b
d. None of the above
15) What are the consequences over the non-linear distortion by the inception of negative feedback?
a. Level of non-linear distortion goes on increasing
b. Level of non-linear distortion goes on decreasing
c. Level of non-linear distortion undergoes stability
d. None of the above
16) Stability of a transfer gain is generally defined as the reciprocal of _______
a. Resistivity
b. Conductivity
c. Sensitivity
d. Desensitivity
17) What would happen, if the signal Xd passes through the feedback network?
a. Xd will get multiplied by 'A'
b. Xd will get multiplied by 'β'
c. Xd will get multiplied by '1 – Aβ'
d. Xd will get multiplied by '1 + Aβ'
18) What should be the value of unity gain frequency for a short circuit CE transistor with gain of 30 at 4MHz and cut-off frequency of about 100 kHz?
a. 40 MHz
b. 80 MHz
c. 120 MHz
d. 150 MHz